1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com tp2520 features low threshold (-2.4v max.) high input impedance low input capacitance (125pf max.) fast switching speeds low on-resistance free from secondary breakdown low input and output leakage applications logic level interfaces C ideal for ttl and cmos solid state relays battery operated systems photo voltaic drives analog switches general purpose line drivers telecom switches ? ? ? ? ? ? ? ? ? ? ? ? ? ? general description this low threshold enhancement-mode (normally-off) transistor utilizes a vertical dmos structure and supertexs well-proven silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coef?cient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally- induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. p-channel enhancement mode vertical dmos fets -g indicates package is rohs compliant (green) parameter value drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55c to +150c soldering temperature* 300c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. * distance of 1.6 mm from case for 10 seconds. absolute maximum ratings ordering information device package option bv dss /bv dgs (v) r ds(on) (max) () v gs(th) (max) (v) i d(on) (min) (a) to-243aa (sot-89) tp2520 TP2520N8-G -200 12 -2.4 -0.75 pin con?guration product marking to-243aa (sot-89) (n8) to-243aa (sot-89) (n8) tp5cw w = code for week sealed = green packagin g ga te source drain drain package may or may not include the following marks: si or
2 tp2520 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com thermal characteristics package i d (continuous) ? (ma) i d (pulsed) (a) power dissipation @ t a = 25 o c (w) jc ( o c/w) j a ( o c/w) i dr ? (ma) i drm (a) to-243aa (sot-89) -260 -2.0 1.6 15 78 -260 -2.0 i d (continuous) is limited by max rated t . mounted on fr5 board, 25mm x 25mm x 1.57mm. switching waveforms and test circuit 90% 10% 90% 90% 10% 10% puls e genera to r v dd r l outpu t d.u.t . t (on) t d(on) t (off ) t d(off) t f t r inpu t input output 0v v dd r gen 0v -10v sym parameter min typ max units conditions electrical characteristics (t a = 25c unless otherwise speci?ed) bv dss drain-to-source breakdown voltage -200 - - v v gs = 0v, i d = -2.0ma v gs(th) gate threshold voltage -1.0 - -2.4 v v gs = v ds , i d = -1.0ma ?v gs(th) change in v gs(th) with temperature - - 4.5 mv/ o c v gs = v ds , i d = -1.0ma i gss gate body leakage - - -100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current - - -10 a v gs = 0v, v ds = max rating - -1.0 ma v ds = 0.8 max rating, v gs = 0v, t a = 125c i d(on) on-state drain current -0.25 -0.7 - a v gs = -4.5v, v ds = -25v -0.75 -2.1 - v gs = -10v, v ds = -25v r ds(on) static drain-to-source on-state resistance - 10 15 v gs = -4.5v, i d = -100ma 8.0 12 v gs = -10v, i d = -200ma ?r ds(on) change in r ds(on) with temperature - - 1.7 %/ o c v gs = -10v, i d = -200ma g fs forward transconductance 100 250 - mmho v ds = -25v, i d = -200ma c iss input capacitance - 75 125 pf v gs = 0v, v ds = -25v, f = 1.0 mhz c oss common source output capacitance - 20 85 c rss reverse transfer capacitance - 10 35 t d(on) turn-on delay time - - 10 ns v dd = -25v, i d = -750ma, r gen = 25? t r rise time - - 15 t d(off) turn-off delay time - - 20 t f fall time - - 15 v sd diode forward voltage drop - - -1.8 v v gs = 0v, i sd = -500ma t rr reverse recovery time - 300 - ns v gs = 0v, i sd = -500ma notes: ll d.. paraeters teste at unless oterwise state. (ulse test: s pulse ut ccle.) ll .. paraeters saple teste. . .
3 tp2520 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com typical performance curves output character istic s -2.5 -2.0 -1.5 -1.0 -0.5 0 saturation characte ri stic s -2. 0 -1. 6 -1. 2 -0. 8 -0. 4 0 maximum rated saf e operating area -1 -100 0 -100 -10 -0.1 -1.0 -10 -0.0 1 ther mal response characte ri stic s ) d e z i l a m r o n ( e c n a t s i s e r l a m r e h t 1. 0 0. 8 0. 6 0. 4 0. 2 0 0.001 1 0 0.01 0.1 1 tr ansconductance vs . drain curren t 1.0 0.8 0.6 0.4 0.2 0 0 -2.0 -0.4 po wer dissipation vs . ambient te mperatur e 0 150 10 0 50 2. 0 12 5 75 25 0 - 10 -2 0 - 30 -50 -40 v gs = -10v -4v -3v 0 - 2 - 4 - 6 -10 -8 -6v -6v -8v -4v -8v t a = 25c t a = 125 c t a = -55 c -0.8 -1.2 -1.6 to -243aa (dc ) 1. 0 0 -3v to - 243a a v ds v ds (v olts ) i d ) s e r e p m a ( i d ) s e r e p m a ( v gs = -10 v v ds = -25v g s f ) s n e m e i s ( p d ) s t t a w ( v ds t p (seconds ) i d ) s s e r e p m a ( to -243aa (pulsed ) t a (c) i d (amperes) t a = 25c to-243aa t a = 25 c p d = 1.6 w
4 tp2520 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com typical performance curves (cont.) gate drive dynamic characteristic s q g (nanocoulombs ) v ) h t ( s g ) d e z i l a m r o n ( v (th) and r ds v ariation with te mperatur e on-resistance vs. drain curren t r ) n o ( s d ) s m h o ( bv dss variation with temperature v b s s d ) d e z i l a m r o n ( t ransfer characteristics capacitance vs. drain-to-source v oltage 200 ) s d a r a f o c i p ( c 0 - 10 -2 0 - 30 -4 0 150 100 0 0 - 2 - 4 - 6 - 8 -10 -2.5 -2.0 -1.5 -1.0 -0.5 0 -5 0 0 50 100 150 1. 1 1. 0 50 40 30 20 10 0 1.2 1.1 1.0 0.9 0.8 -1 0 -8 -6 -4 -2 0 0 .5 1.0 1.5 2.0 2.5 -5 0 0 50 100 150 73pf 0 - 0.5 -1. 0 - 1.5 - 2. 5 -2.0 f = 1mhz 0. 9 200pf 2.5 2.0 1.5 1.0 0.5 0 v (th) @ -1ma 50 0 r ds(on ) @ -10v , -0.2 a t j (c) i d (amperes ) v gs = -10v v gs = -4.5v r ) n o ( s d ) d e z i l a m r o n ( t j (c) v gs (volts) v ds = -25v t a = -55c 25 c 125 c i d ) s e r e p m a ( v ds = -10v v ds = -40v v ds (volts) v s g ) s t l o v ( c iss c os s c rss
supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate product liability indemnification insurance agreement. supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. no responsibility is assumed for possible omissions and inaccuracies. circuitry and specifications are subject to change without notice. for the latest product specifications refer to the supertex inc. website: http//www .supertex.com . ?2009 all rights reserved. unauthorized use or reproduction is prohibited . 1235 bordeaux drive, sunnyvale, ca 94089 te l: 408-222-8888 www .supertex.com 5 tp2520 (the package drawing(s) in this data sheet may not re?ect the most current speci?cations. for the latest package outline information go to http://www.supertex.com/packaging.htm l .) doc.# dsfp - tp2520 b022309 3-lead to-243aa (sot-89) package outline (n8) symbol a b b1 c d d1 e e1 e e1 h l dimensions (mm) min 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.13 1.50 bsc 3.00 bsc 3.94 0.89 nom - - - - - - - - - - max 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20 jedec registration to-243, variation aa, issue c, july 1986. drawings not to scale . supertex doc. #: dspd-3to243aan8, version d070908. b b1
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